Growth-related defects in high quality monocrystalline silicon wafers

  • Understanding the structure and evolution of the boron-oxygen defect, also in relation to compensated silicon wafers.
  • Studying the interaction of trace metal impurities with extended defects such as oxygen precipitates and dislocations.
  • Understanding the impact of intrinsic defects related to silicon vacancies and self-interstitials, and their interactions with light elements such as O and N, in high quality Czochralski-grown silicon, especially n-type wafers.

Image of dopant density variations in a boron-doped, float-zone, 4 inch diameter silicon wafer.

Image of dopant density variations in a boron-doped, float-zone, 4 inch diameter silicon wafer. From S. Y Lim et al., IEEE Journal of Photovoltaics, 3 (2), pp. 649-655 (2013).

Updated:  1 January 2018/Responsible Officer:  Head of School/Page Contact:  CECS Marketing