Understanding the structure and evolution of the boron-oxygen defect, also in relation to compensated silicon wafers.
Studying the interaction of trace metal impurities with extended defects such as oxygen precipitates and dislocations.
Understanding the impact of intrinsic defects related to silicon vacancies and self-interstitials, and their interactions with light elements such as O and N, in high quality Czochralski-grown silicon, especially n-type wafers.
Image of dopant density variations in a boron-doped, float-zone, 4 inch diameter silicon wafer. From S. Y Lim et al., IEEE Journal of Photovoltaics, 3 (2), pp. 649-655 (2013).