The effects of dopant compensation (the simultaneous presence of p-type and n-type dopants) on carrier recombination and mobilities.
The relative impact of defects and impurities in n- and p-type silicon.
Fundamental properties of silicon such as Auger recombination, radiative recombination, and band-to-band absorption.
PL-based lifetime images of a multicrystalline silicon wafer before and after applying a de-smearing algorithm that corrects for lateral carrier diffusion. From S. P. Phang et al., Applied Physics Letters, 103, 192112 (2013).