Developing novel techniques for silicon materials characterisation

  • Development of sensitive, spatially resolved methods for detecting dopants and impurities in silicon wafers based on photoluminescence imaging.
  • The use of spectral photoluminescence to study defects and impurities in silicon wafers, such as dislocations, through sub-band-gap luminescence.



Updated:  1 January 2018/Responsible Officer:  Head of School/Page Contact:  CECS Marketing