Developing novel techniques for silicon materials characterisation

  • Development of sensitive, spatially resolved methods for detecting dopants and impurities in silicon wafers based on photoluminescence imaging.
  • The use of spectral photoluminescence to study defects and impurities in silicon wafers, such as dislocations, through sub-band-gap luminescence.

 

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Updated:  8 September 2015/Responsible Officer:  Head of School/Page Contact:  CECS Marketing